Optimizing the Decoupling Network of a GaN-based Switcher

Abstract:

The next evolution of power electronics will center around high electron mobility transistors (HEMT). These HEMT devices are built using what is known as wide bandgap (WBG) semiconductors. WBG semiconductors have a much wide-bandgap between the valence band and the conduction band than conventional silicon semiconductors. For example, the bandgap energy of conventional silicon is about 1.5eV whereas gallium nitride (GaN) devices have about 3.5eV. Getting up to speed on these devices can be a challenge, which is why manufacturers provide reference designs.

Reference designs for wide bandgap semiconductors are just that and often need tweaking and tuning for your particular design needs. This webinar takes a look at the input and output decoupling/filtering networks for a GaN-based power stage and attempts to optimize the design for component count and size while still retaining the original functionality of the reference using eCADSTAR as the CAD platform.

In this webinar, you’ll learn:

• Finding and adding parts from the web to the library
• Setting up a simulation scenario using the LTSpice integration
• Competing simulation results and tuning the performance
• Sending to manufacturing and comparing the layouts in 3D

Who should attend:

Electronics engineers, test engineers, quality assurance, sourcing managers, engineering managers.

Presenter:

Name: Wilmer Companioni

Title: Technical Marketing Manager

Company: Zuken USA Inc.

Bio: Wilmer joined Zuken recently and prior to Zuken was Technical Marketing Manager for a passive component manufacturer and is also experienced in mobile device engineering with a brief stopover in sales. One of Wilmer’s main interests is to demystify electronic concepts and make them accessible and relevant to everyone.